PHOTOLUMINESCENCE OF HEAVILY P-TYPE-DOPED GAAS - TEMPERATURE AND CONCENTRATION DEPENDENCES

Photoluminescent (PL) properties of heavily carbon- and zinc-doped GaA s were investigated for concentration from 8 X 10(17) to 2.3 x 10(20) cm-3 and temperature from 300 K to 20 K. Both a band-to-band (B, B) pe ak and a band-to-acceptor (e, A) peak appeared at 300 K for the heavil y p-type-doped GaAs PL spectra, even in degenerated GaAs. The variatio n of the intensities of the (e, A) peak and (B, B) peak with concentra tion and temperature was investigated, and the change in position of t he two peaks at various concentrations and temperatures was observed. The rapid increase in linewidth with increasing concentration due to t he appearance of a shoulder peak was also studied; this behavior is di fferent from that of the shoulder peak in the PL spectrum from Zn-dope d crystal.