H. Daio et al., INFLUENCE OF CRYSTAL THERMAL HISTORY ON SURFACE RECOMBINATION LIFETIME AT ELEVATED-TEMPERATURES IN MAGNETIC-FIELD-APPLIED CZOCHRALSKI SILICON, JPN J A P 1, 33(4A), 1994, pp. 1970-1971
Recombination lifetime for wafers prepared from two magnetic-field-app
lied Czochralski MCZ silicon crystals with a different body length was
analyzed using a laser/microwave photoconductance (LM-PC) technique w
ith an algorithm to separate the surface and bulk components. It has b
een shown that the surface lifetime dominantly contributes to the depe
ndence of the effective lifetime at elevated temperatures on the cryst
al length. It is interpreted that the surface lifetime is strongly aff
ected by the grown-in defects which depend on the thermal history, or
the crystal length of the silicon crystals.