INFLUENCE OF CRYSTAL THERMAL HISTORY ON SURFACE RECOMBINATION LIFETIME AT ELEVATED-TEMPERATURES IN MAGNETIC-FIELD-APPLIED CZOCHRALSKI SILICON

Recombination lifetime for wafers prepared from two magnetic-field-app lied Czochralski MCZ silicon crystals with a different body length was analyzed using a laser/microwave photoconductance (LM-PC) technique w ith an algorithm to separate the surface and bulk components. It has b een shown that the surface lifetime dominantly contributes to the depe ndence of the effective lifetime at elevated temperatures on the cryst al length. It is interpreted that the surface lifetime is strongly aff ected by the grown-in defects which depend on the thermal history, or the crystal length of the silicon crystals.