S. Sakakibara et al., CHARACTERISTICS OF CHLORINE-DOPED ZNSE FILMS AND ZNSE-ZNS SUPERLATTICES GROWN BY HOT-WALL EPITAXY, JPN J A P 1, 33(4A), 1994, pp. 2008-2014
Chlorine-doped (Cl-doped) n-type ZnSe films were prepared on GaAs(100)
substrates by hot wall epitaxy (HWE) using ZnCl2 as a doping source.
The electron concentration could be controlled from 8.4 x 10(14) Cm-3
to 2.8 x 10(19) cm-3 by varying the ZnCl2 temperature. ZnSe films with
an electron concentration above 10(19) CM-3, having a donor-bound exc
itonic photoluminescence emission (I2) without deep level emission wer
e obtained for the first time. The activation energy of the chlorine d
onor was estimated to be 26.7 meV from the photon energy of I2. The ex
istence of Cl in the films was confirmed by SIMS. Moreover, the Cl-dop
ed ZnSe-ZnS superlattices with high electron concentration on the orde
r of 10(17) cm-3 and excitonic PL emissions associated with the free e
xciton, were obtained for the first time.