MEASUREMENT OF THIN OXIDE-FILMS ON IMPLANTED SI-SUBSTRATE BY ELLIPSOMETRY

In this study, the thickness of oxide film which is deposited by low-t emperature chemical vapor deposition (LTCVD) on an implanted silicon s ubstrate was measured by multiple-angle incident (MAI) ellipsometry. B y using this method, the refractive index, thickness, and the effectiv e index of the substrate can be calculated simultaneously. It is found that the thickness of oxide film on an implanted silicon substrate is only 4% different from that on a nonimplanted silicon substrate under the same deposition conditions. The result shows that a higher implan tation energy results in a higher effective substrate index. Even with a high temperature and long annealing process, the refractive index o f the implanted silicon substrate cannot recover to the value of nonim planted silicon substrate.