We have studied the luminescence of natural SiO2 quartz induced by irr
adiations with heavy ions in the MeV amu(-1) range. The spectra obtain
ed with sample temperatures of similar to 85 K have the same features
and line shapes, irrespective of the fluence (phi t) and electronic st
opping power (S-e) of the different ions (from C-12 to I-127). The spe
ctra are least-squares fitted with three Gaussian functions centered a
t 440 nm (2.8 eV), 500 nm (2.5 eV), and 740 nm (1.65 eV). When increas
ing phi t, the intensities (I) of all three bands decrease and the dec
rease is fitted by, approximately, an exponential law, i.e., I = I-o e
xp(-sigma phi t), with approximately the same decay cross-section (sig
ma). sigma is found to increase by one order of magnitude when increas
ing S-e above the amorphous track formation threshold at 2.5 keV nm(-1
). Above this threshold, sigma is also larger than the track core cros
s-section by one order of magnitude and does not vary versus S-e. Thes
e data are interpreted by the interactions of the self-trapped exciton
s (STEs) with the ion-induced defects increasing the non-radiative rec
ombinations of the STEs. (C) 1997 Elsevier Science B.V.