DEPOSITION OF SIO2 AND TIO2 THIN-FILMS BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FOR ANTIREFLECTION COATING

Silicon dioxide and titanium dioxide films were deposited at low tempe rature by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (PECVD) using respectively O-2 and tetraethoxysilane (TEOS) or titanium isopropoxide (TIPT) as precursors. To control the t hickness and the refractive index during deposition, the plasma reacto r was equipped with an in situ spectroscopic ellipsometer. Deposition kinetics and layer properties were investigated by spectroscopic ellip sometry, X-ray photoelectron spectroscopy (XPS) and chemical etch rate . A double film antireflection coating was fabricated and reflectance was measured using a UV-visible near-infrared spectrometer. Results re ported demonstrate that deposition of SiO2 and TiO2 films at low tempe rature by PECVD is a promising method to produce antireflection coatin gs for solar cells. (C) 1997 Elsevier Science B.V.