COMPARISON OF THE CHARGES GENERATED BY FOWLER-NORDHEIM TUNNELING INJECTION IN DIFFERENT OXIDES OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS

Fowler-Nordheim tunneling injection was performed, from the gate, in P -type metal-oxide-semiconductor capacitors with HCl, wet or dry oxides and polysilicon gate. Trapped holes, as well as negative and anomalou s positive charges were created. In this paper, we establish a classif ication of quality, based on the magnitude of the stress generated oxi de charge density, for the three oxides. The HCl and wet oxides are be tter than the dry oxide. The dry oxide has larger oxide charges than t he other oxides; the creation of the generated positive charge is not only due to hydrogen. (C) 1997 Elsevier Science B.V.