LOW-FREQUENCY NOISE CHARACTERIZATION OF 0.25 MU-M SI CMOS TRANSISTORS

The low frequency (LF) noise and random telegraph signal (RTS) fluctua tions in 0.25 mu m complementary metal-oxide-semiconductor (CMOS) devi ces are investigated, We find that the 1/f noise stems from fluctuatio ns in carrier number for both n and p channel MOS devices. The slow ox ide trap concentration deduced from the noise data is approximate to 1 0(17) eV/cm(3) in agreement with state-of-the-art gate oxides. The stu dy of some particular RTSs is performed and provide the gate voltage d ependence of the capture/emission times as well as of the drain curren t RTS amplitude. Drain current RTS amplitude as large as 10% have been observed, being somewhat larger than for 0.35 mu m CMOS technology. ( C) 1997 Elsevier Science B.V.