SILICON-OXIDE DEFECTS IN AGING OF MOS ELECTRONIC DEVICES

Electrical ageing with applied drain and gate bias on n type metal-oxi de-semiconductor (MOS) transistors has been shown to produce defects i n the insulating oxide (SiO2) layer. The characterization method is ba sed on numerical analysis performed on the substrate-drain junction ex perimental current-voltage curves to extract electrical parameters. Th e observed recombination carrier increase is related to hot carriers e lectron induced damage in the gate-to-drain overlap region. (C) 1997 E lsevier Science B.V.