ELECTRICAL-PROPERTIES OF METAL (INDIUM) POLYANILINE SCHOTTKY DEVICES/

Schottky devices were fabricated by thermal evaporation of indium on c hemically synthesized polyaniline, poly(o-anisidine), and poly( anilin e-co-ortho-anisidine) co-polymer. Electrical characterization of each of these devices was carried out using current (I)-voltage (V) and cap acitance (C)-voltage (V) measurements. The value of various junction p arameters such as rectification ratio, ideality factor, and barrier he ights of an In/poly (aniline-co-o-anisidine) Shootky device were found to be 300, 4.41, and .4972 V compared to the values of 60, 5.5, and 0 .5101 V obtain for an In/polyaniline device, respectively. (C) 1997 Jo hn Wiley & Sons, Inc.