Ae. Parker et Dj. Skellern, A REALISTIC LARGE-SIGNAL MESFET MODEL FOR SPICE, IEEE transactions on microwave theory and techniques, 45(9), 1997, pp. 1563-1571
A comprehensive large-signal MESFET model that provides a realistic de
scription of measured characteristics over all operating regions is pr
esented, It describes subthreshold conduction and breakdown, It has fr
equency dispersion of both transconductance and drain conductance, and
derates with power dissipation, All derivatives are continuous for a
realistic description of circuit distortion and intermodulation, The m
odel has improved descriptions of capacitance and bias dependence, It
has small-signal S-parameter accuracy extended to a wide range of oper
ating conditions, The model is implemented with new techniques for con
tinuity and dispersion, These provide accurate prediction of circuit p
erformance and also improve simulation speed.