A REALISTIC LARGE-SIGNAL MESFET MODEL FOR SPICE

A comprehensive large-signal MESFET model that provides a realistic de scription of measured characteristics over all operating regions is pr esented, It describes subthreshold conduction and breakdown, It has fr equency dispersion of both transconductance and drain conductance, and derates with power dissipation, All derivatives are continuous for a realistic description of circuit distortion and intermodulation, The m odel has improved descriptions of capacitance and bias dependence, It has small-signal S-parameter accuracy extended to a wide range of oper ating conditions, The model is implemented with new techniques for con tinuity and dispersion, These provide accurate prediction of circuit p erformance and also improve simulation speed.