OPTICAL PHONONS OF STRAINED GAAS GAP QUANTUM-WELLS STUDIED BY RAMAN-SPECTROSCOPY/

Authors
CASTRILLO P ARMELLES G SILVEIRA JP BRIONES F BARBOLLA J
Citation
P. Castrillo et al., OPTICAL PHONONS OF STRAINED GAAS GAP QUANTUM-WELLS STUDIED BY RAMAN-SPECTROSCOPY/, Applied physics letters, 71(10), 1997, pp. 1353-1355
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
10
Year of publication
1997
Pages
1353 - 1355
Database
ISI
SICI code
0003-6951(1997)71:10<1353:OPOSGG>2.0.ZU;2-5
Abstract
We have studied the optical phonons of GaAs quantum wells strained to GaP. The phonon frequencies have been measured by Raman spectroscopy. The results have been compared with calculations based on the linear c hain model and the random isoamplitude model. The comparison suggests a certain degree of atomic intermixing at the interfaces, mainly due t o a limited but measurable arsenic carry-over during growth. (C) 1997 American Institute of Physics.