TRIVALENT BEHAVIOR OF PALLADIUM IN SILICON

Palladium is known to exhibit an acceptor state at E-C-0.22 eV in n-ty pe Si and a donor state at E-V+ 0.31 eV in p-type Si. We have identifi ed a third level at E-V + (0.140 +/- 0.005) eV and attribute it to the double donor state of substitutional Pd. The Pd level positions are v ery similar to the corresponding levels for Pt. The double donor state s of both metals show an electric field dependence of the emission rat es and a thermal activation of the hole capture cross sections. (C) 19 97 American Institute of Physics.