INDUCTIVELY HEATED CVD REACTOR FOR COATING TIN FILM ONTO A TUNGSTEN CARBIDE SURFACE

In an rf inductively heated quartz reactor, high-quality TiN film can be deposited onto a hard alloy cutting tool surface. Preferable operat ing conditions are found by experiments. Strong natural convection of gas and point-to-point temperature difference occur between the substr ate and the reactor wall. Four second-order partial differential equat ions (PDE) have been set up to describe flow pattern, temperature dist ribution, and deposition rate. Galerkin's finite element method is app lied for this two-dimensional problem. The domain is split into 262 qu adrangle elements with 909 nodes. For a cold-wall reactor, the streaml ines and isotherms are shown. An upward flow above the substrate causi ng a nonuniform deposition rate on the horizontal surface matches the authors' experiments. Experiments for TiN deposition rates under diffe rent TiCl4 partial pressures are carried out to check computer simulat ion results.