TRANSMISSION ELECTRON-MICROSCOPY STUDY OF STACKING-FAULT TRAPEZOIDS AND STACKING-FAULT TUBES IN ZNSE GAAS(001) PSEUDOMORPHIC EPITAXIAL LAYERS/

Using the classical stacking-fault pyramid as an internal reference, t he fault planes and stair-rod dislocations in stacking-fault trapezoid s and stacking-fault tubes in pseudomorphic ZnSe/GaAs(001) epitaxial l ayers have been characterized. The acute-obtuse stair-rod dislocation pair in a stacking-fault trapezoid form an extended C dislocation dipo le. Stacking faults with a lozenge-shaped cross-section in a stacking- fault tube intersect to give rise to dislocation dipoles of alternatin g acute-obtuse stair-rod dislocations. The extended dislocation dipole s of the stacking-fault trapezoids and stacking-fault tubes can act as diffusion channels for pipe diffusion of point defects during the deg radation process.