VIBRATION OF AN INTERFACE BETWEEN SI AND SIO2 DURING REDUCTION OF SIO2

Authors
TSUKIMOTO S SASAKI K HIRAYAMA T SAKA H
Citation
S. Tsukimoto et al., VIBRATION OF AN INTERFACE BETWEEN SI AND SIO2 DURING REDUCTION OF SIO2, Philosophical magazine letters, 76(3), 1997, pp. 173-179
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Philosophical magazine letters → ACNP
ISSN journal
09500839
Volume
76
Issue
3
Year of publication
1997
Pages
173 - 179
Database
ISI
SICI code
0950-0839(1997)76:3<173:VOAIBS>2.0.ZU;2-2
Abstract
A Si single crystal covered with a thick amorphous layer of SiO2 was h eated in vacuum in an electron microscope between 1373 and 1473 K. Dur ing the heating the amorphous layer of SiO2 was reduced. It was found that the interface between crystalline Si and SiO2 vibrates during red uction.