STRUCTURE, COMPOSITION AND ELECTROOPTICAL PROPERTIES OF N-TYPE AMORPHOUS AND MICROCRYSTALLINE SILICON THIN-FILMS

Authors
MARTINS R MACARICO A VIEIRA M FERREIRA I FORTUNATO E
Citation
R. Martins et al., STRUCTURE, COMPOSITION AND ELECTROOPTICAL PROPERTIES OF N-TYPE AMORPHOUS AND MICROCRYSTALLINE SILICON THIN-FILMS, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 76(3), 1997, pp. 249-258
Citations number
31
Categorie Soggetti
Physics, Applied",Mechanics,"Physics, Condensed Matter","Material Science
Journal title
Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic → ACNP
ISSN journal
13642812
Volume
76
Issue
3
Year of publication
1997
Pages
249 - 258
Database
ISI
SICI code
1364-2812(1997)76:3<249:SCAEPO>2.0.ZU;2-I
Abstract
This paper deals with the structure, composition and electro-optical c haracteristics of n-type amorphous and microcrystalline silicon thin f ilms produced by plasma-enhanced chemical vapour deposition in a hydro gen-helium mixture. In addition, special emphasis is given to the role that hydrogen incorporation plays in the film's properties and in the characteristics of n-type microcrystalline films presenting simultane ously optical gaps of about 2.3 eV (controlled by the hydrogen content in the film), a dark conductivity of 6.5 S cm(-1) and a Hall mobility of about 0.86 cm(2) V-1 s(-1), the highest combined values for n-type microcrystalline silicon films, as far as we know.