R. Martins et al., ROLE OF THE DEPOSITION PARAMETERS IN THE UNIFORMITY OF FILMS PRODUCEDBY THE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION TECHNIQUE, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 76(3), 1997, pp. 259-272
The objective of this work is to present an analytical model able to i
nterpret the experimental dependence of the uniformity of films produc
ed by the plasma-enhanced chemical vapour deposition technique on the
deposition parameters (discharge pressure, gas Bow temperature and rf
power density). The model proposed is based on the Navier-Stokes equat
ions applied to a gas flow considered to be quasi-incompressible and q
uasi-inviscous, whenever the Mach number is below 0.3. This condition
leads to the establishment of the proper quasisteady-state gas Bow equ
ations, and the corresponding equations of energy and momentum balance
ascribed to the mass profile of the species formed, under the presenc
e of a low-rf-power plasma density, are able to predict the uniformity
distribution of the film over the entire deposited substrate area.