ROLE OF THE DEPOSITION PARAMETERS IN THE UNIFORMITY OF FILMS PRODUCEDBY THE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION TECHNIQUE

Citation
R. Martins et al., ROLE OF THE DEPOSITION PARAMETERS IN THE UNIFORMITY OF FILMS PRODUCEDBY THE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION TECHNIQUE, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 76(3), 1997, pp. 259-272
Citations number
32
Categorie Soggetti
Physics, Applied",Mechanics,"Physics, Condensed Matter","Material Science
ISSN journal
13642812
Volume
76
Issue
3
Year of publication
1997
Pages
259 - 272
Database
ISI
SICI code
1364-2812(1997)76:3<259:ROTDPI>2.0.ZU;2-J
Abstract
The objective of this work is to present an analytical model able to i nterpret the experimental dependence of the uniformity of films produc ed by the plasma-enhanced chemical vapour deposition technique on the deposition parameters (discharge pressure, gas Bow temperature and rf power density). The model proposed is based on the Navier-Stokes equat ions applied to a gas flow considered to be quasi-incompressible and q uasi-inviscous, whenever the Mach number is below 0.3. This condition leads to the establishment of the proper quasisteady-state gas Bow equ ations, and the corresponding equations of energy and momentum balance ascribed to the mass profile of the species formed, under the presenc e of a low-rf-power plasma density, are able to predict the uniformity distribution of the film over the entire deposited substrate area.