IMPURITY LEVELS IN PHOSPHORUS-DOPED AND BORON-DOPED AMORPHOUS-SILICON

Authors
KADAS K KUGLER S
Citation
K. Kadas et S. Kugler, IMPURITY LEVELS IN PHOSPHORUS-DOPED AND BORON-DOPED AMORPHOUS-SILICON, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 76(3), 1997, pp. 281-285
Citations number
8
Categorie Soggetti
Physics, Applied",Mechanics,"Physics, Condensed Matter","Material Science
Journal title
Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic → ACNP
ISSN journal
13642812
Volume
76
Issue
3
Year of publication
1997
Pages
281 - 285
Database
ISI
SICI code
1364-2812(1997)76:3<281:ILIPAB>2.0.ZU;2-A
Abstract
The AMI semiempirical quantum-chemical method has been used to investi gate phosphorus and boron-doped amorphous silicon. A simple relationsh ip for the determination of midgap energy levels is proposed for subst itutionally doped amorphous silicon as a function of distances between dopants.