A SEMICONDUCTING ALN COATING FOR MICROSTRIP GAS-CHAMBERS

Authors
BONDAR A BUZULUTSKOV A NAGASLAEV V SHEKHTMAN L TATARINOV A BLAUTBLACHEV A BOUILOV L SPITSYN B
Citation
A. Bondar et al., A SEMICONDUCTING ALN COATING FOR MICROSTRIP GAS-CHAMBERS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 394(1-2), 1997, pp. 265-267
Citations number
11
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
394
Issue
1-2
Year of publication
1997
Pages
265 - 267
Database
ISI
SICI code
0168-9002(1997)394:1-2<265:ASACFM>2.0.ZU;2-W
Abstract
AlN, a new semiconducting coating for microstrip gas chambers (MSGC) h as been studied: The AIN surface resistivity is about 2 x 10(15) Ohm/s quare at a film thickness between 0.2 and 0.4 mu m. The rate capabilit y of an MSGC with AlN undercoating is 10(5)-10(6) mm(-2) s(-1) dependi ng on the surface resistivity value. The compatability of AIN undercoa ting with a particular lithographic technique for MSGCs with gold stri ps is investigated.