Y. Morishita et al., SUBSTRATE-ORIENTATION DEPENDENCE ON STRUCTURE AND MAGNETIC-PROPERTIESOF MNAS EPITAXIAL LAYERS, JPN J A P 2, 36(8B), 1997, pp. 1100-1103
Ferromagnetic MnAs layers were grown on (001), (111)A, and (111)B GaAs
substrates by molecular-beam epitaxy at substrate temperatures (T-s)
in the range from 150 to 400 degrees C. The crystal structure of the M
nAs was NiAs type and its orientation was found to change depending on
the substrate, (<(1)over bar 101>) for the (001) GaAs substrate and (
0001) for the (111)A and (111)B substrates at T-s between 300 and 400
degrees C. Polar magneto-optical Kerr-effect measurement demonstrated
a crystal-orientation dependence of Kerr rotation and Kerr ellipticity
spectra of the MnAs epitaxial layers.