INTERDIFFUSION BETWEEN INAS QUANTUM DOTS AND GAAS MATRICES

The existence of interdiffusion between self-assembled lnAs quantum do ts and a GaAs substrate has been investigated using ordinary Rutherfor d backscattering which is also useful for determining the value of the average InAs layer thickness. As a result, evidence for the diffusion of Ga atoms into the dot is obtained. Furthermore, spatial distributi on of the disused Ga atoms in InAs dots is suggested.