DIELECTRIC MATERIALS FOR ADVANCED VLSI AND ULSI TECHNOLOGIES

Advancements in very-large-scale integration (VLSI) and ultra-large-sc ale integration (ULSI) of semiconductor devices result in complex, mul tilevel interconnect schemes and increased dependence on dielectric ma terials. These material systems (how the various materials in an integ rated circuit [IC] are united together) are used in a variety of thin- film applications, such as insulators, ion implanting, and pattern-etc h masking, as well as in final device passivation. For such applicatio ns, thin films must exhibit good mechanical, chemical, and electrical properties that are compatible with ic processing schemes. Thin films must also meet ease-of-manufacturing requirements. These stringent dem ands require a clear understanding of the material systems used in adv anced technologies. Therefore, dielectric materials are selected accor ding to applications, deposition process and hardware, film properties , and device integration. Thin-film deposition techniques, including p lasma-enhanced, low-pressure thermal, electron-cyclotron-resonance che mical vapor, and spin-on are presented. Emerging deposition processes and new dielectrics are also discussed.