Y. Nishino et al., SEMICONDUCTOR-LIKE BEHAVIOR OF ELECTRICAL-RESISTIVITY IN HEUSLER-TYPEFE2VAL COMPOUND, Physical review letters, 79(10), 1997, pp. 1909-1912
An anomalous negative temperature dependence of electrical resistivity
has been observed in (Fe1-xVx)(3)Al alloys with V compositions up to
x = 0.35. In particular, the Heusler-type Fe2VAl compound is found to
be on the verge of magnetic ordering and to exhibit a semiconductorlik
e behavior with the resistivity reaching 3000 mu Omega cm at 2 K, in s
pite of the possession of a clear Fermi cutoff as revealed in photoemi
ssion valence-band spectra. A substantial mass enhancement deduced fro
m specific heat measurements suggests that Fe2VAl is a possible candid
ate for a 3d heavy-fermion system.