INTERBAND-TRANSITIONS IN SNXGE1-X ALLOYS

Authors
HE G ATWATER HA
Citation
G. He et Ha. Atwater, INTERBAND-TRANSITIONS IN SNXGE1-X ALLOYS, Physical review letters, 79(10), 1997, pp. 1937-1940
Citations number
20
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
79
Issue
10
Year of publication
1997
Pages
1937 - 1940
Database
ISI
SICI code
0031-9007(1997)79:10<1937:IISA>2.0.ZU;2-Z
Abstract
Optical absorption measurements for diamond cubic SnxGe1-x alloy films indicate strong interband transitions with a change in direct energy gap of 0.35 < E-g, < 0.80 eV for 0.15 > x > 0. The optical energy gap undergoes an indirect to direct transition in this composition range a nd decreases much faster with Sn content than predicted by tight bindi ng and pseudopotential calculations in the virtual crystal approximati on.