AN HSF-SIMS INVESTIGATION OF THE PREPHOSPHATATION CONTRIBUTION TO THEPHOSPHATATION PROCESS OF SILICON STEEL SURFACE

Secondary ion mass spectrometry based on High energy (MeV) Ar3+ ions a nd Fast extraction (time-of-flight or TOF) has been used for investiga ting the prephosphatation contribution to the phosphatation process of silicon steel sample surface. The so-called HSF-SIMS technique allows easy identification and semi-quantification of the Solid material-spe cific ions such as Na+, Na2OH+, PO2- and PO3-, A high sensitivity for phosphate species present on steel surfaces is observed, enabling one to study the effects of pre-and post-deposition treatments on the stat e of the surface phosphate layer, Finally, the prospect for quantitati ve analysis is demonstrated by the good correlation between measured s econdary ion yields and superficial concentration of the deposited pho sphate. (C) 1997 by John Wiley & Sons, Ltd.