ON THE LOW-TEMPERATURE MOBILITY OF HOLES IN GATED OXIDE SI SIGE HETEROSTRUCTURES/

Authors
LANDER RJP KEARNEY MJ HORRELL AI PARKER EHC PHILLIPS PJ WHALL TE
Citation
Rjp. Lander et al., ON THE LOW-TEMPERATURE MOBILITY OF HOLES IN GATED OXIDE SI SIGE HETEROSTRUCTURES/, Semiconductor science and technology, 12(9), 1997, pp. 1064-1071
Citations number
32
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
12
Issue
9
Year of publication
1997
Pages
1064 - 1071
Database
ISI
SICI code
0268-1242(1997)12:9<1064:OTLMOH>2.0.ZU;2-A
Abstract
A detailed comparison is made between theory and experiment for the lo w-temperature mobility of holes in gated oxide, coherently strained Si /SiGe heterostructures. We conclude that the mobility is mainly limite d by interface impurities, conventional surface roughness and strain f luctuations; by contrast, we argue that alloy scattering is comparativ ely weak. Comments regarding possible mobility degradation due to oxid e formation are also made.