STUDY OF RECOMBINATION PROPERTIES OF NEUTRON TRANSMUTATION DOPED SILICON-WAFERS

The asymptotic lifetime dependency on temperature, excitation depth an d intensity, and on continuous-wave bias illumination have been invest igated for the simultaneous determination of the recombination paramet ers to characterize neutron transmutation doped silicon by the microwa ve absorption transient technique. These experiments also reveal trapp ing effects. Defects, which are characterized by activation energies o f 0.16+/-0.02 eV, 0.20+/-0.02 eV and 0.28+/-0.04 eV, are controlling b oth bulk and surface recombination. The traps E-C-0.23 eV, E-C-0.28 eV and E-C-0.53 eV, which are revealed by deep-level transient spectrosc opy, confirm the presence of these defects.