Ga. Gamal, THE CONDUCTION MECHANISM AND THERMOELECTRIC PHENOMENON IN IN6S7 LAYERCRYSTALS, Semiconductor science and technology, 12(9), 1997, pp. 1106-1110
In the present paper, measurements of the electrical conductivity and
Hall coefficient on a single crystal of ln(6)S(7), grown by a new crys
tal growth technique, were made. The crystal was found to be of n-type
conductivity. The low-conductivity sample showed as the most striking
feature an exponential increase of the Hall mobility with temperature
. This effect was explained by assuming a mixed conduction and differe
nt scattering mechanisms for electrons and holes in the same temperatu
re range. We have also made thermoelectric power measurements to suppo
rt this assumption. An energy gap of 0.64 eV was found.