THE CONDUCTION MECHANISM AND THERMOELECTRIC PHENOMENON IN IN6S7 LAYERCRYSTALS

Authors
Citation
Ga. Gamal, THE CONDUCTION MECHANISM AND THERMOELECTRIC PHENOMENON IN IN6S7 LAYERCRYSTALS, Semiconductor science and technology, 12(9), 1997, pp. 1106-1110
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
12
Issue
9
Year of publication
1997
Pages
1106 - 1110
Database
ISI
SICI code
0268-1242(1997)12:9<1106:TCMATP>2.0.ZU;2-3
Abstract
In the present paper, measurements of the electrical conductivity and Hall coefficient on a single crystal of ln(6)S(7), grown by a new crys tal growth technique, were made. The crystal was found to be of n-type conductivity. The low-conductivity sample showed as the most striking feature an exponential increase of the Hall mobility with temperature . This effect was explained by assuming a mixed conduction and differe nt scattering mechanisms for electrons and holes in the same temperatu re range. We have also made thermoelectric power measurements to suppo rt this assumption. An energy gap of 0.64 eV was found.