SPONTANEOUS-EMISSION-LIFETIME ALTERATION IN INXGA1-XAS GAAS VERTICAL-CAVITY SURFACE-EMITTING LASER STRUCTURES/

Authors
HANAMAKI Y KINOSHITA H AKIYAMA H OGASAWARA N SHIRAKI Y
Citation
Y. Hanamaki et al., SPONTANEOUS-EMISSION-LIFETIME ALTERATION IN INXGA1-XAS GAAS VERTICAL-CAVITY SURFACE-EMITTING LASER STRUCTURES/, Physical review. B, Condensed matter, 56(8), 1997, pp. 4379-4382
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
56
Issue
8
Year of publication
1997
Pages
4379 - 4382
Database
ISI
SICI code
0163-1829(1997)56:8<4379:SAIIGV>2.0.ZU;2-H
Abstract
The spontaneous-emission lifetime of In0.2Ga0.8As/GaAs vertical-cavity surface-emitting laser structures was investigated at room temperatur e as a function of reflectivity of AlAs/GaAs distributed Bragg reflect ors (DBR's). As the reflectivity of DBR's became higher, the spontaneo us-emission lifetime measured at the resonance wavelength of the cavit y became drastically shorter in the cavity axis direction. This sponta neous-emission-lifetime alteration was much more than that of the prev ious experimental results for quantum wells and the theoretical estima tion for atomic dipoles in the planar microcavity structures.