Pn. Hai et al., COPPER-RELATED DEFECTS IN SILICON - ELECTRON-PARAMAGNETIC-RESONANCE IDENTIFICATION, Physical review. B, Condensed matter, 56(8), 1997, pp. 4620-4625
In this paper the observation of two electron-paramagnetic-resonance s
pectra, both present in p-type silicon samples after doping with silve
r, is reported. The two centers show a symmetry lower than cubic and h
ave an effective electron spin S=1/2. In view of the detected hyperfin
e interaction with nuclear spins I=3/2, the spectra are shown to be re
lated to a contaminant introduced into the samples during the diffusio
n process. By analysis of the features of the spectrum and the defect
formation, a spectrum of the tetragonal symmetry, labeled Si-NL58, is
identified as a copper-copper pair in a negatively charged state. The
second spectrum,labeled Si-NL59, is attributed to a complex containing
one copper atom.