COPPER-RELATED DEFECTS IN SILICON - ELECTRON-PARAMAGNETIC-RESONANCE IDENTIFICATION

Citation
Pn. Hai et al., COPPER-RELATED DEFECTS IN SILICON - ELECTRON-PARAMAGNETIC-RESONANCE IDENTIFICATION, Physical review. B, Condensed matter, 56(8), 1997, pp. 4620-4625
Citations number
29
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
56
Issue
8
Year of publication
1997
Pages
4620 - 4625
Database
ISI
SICI code
0163-1829(1997)56:8<4620:CDIS-E>2.0.ZU;2-9
Abstract
In this paper the observation of two electron-paramagnetic-resonance s pectra, both present in p-type silicon samples after doping with silve r, is reported. The two centers show a symmetry lower than cubic and h ave an effective electron spin S=1/2. In view of the detected hyperfin e interaction with nuclear spins I=3/2, the spectra are shown to be re lated to a contaminant introduced into the samples during the diffusio n process. By analysis of the features of the spectrum and the defect formation, a spectrum of the tetragonal symmetry, labeled Si-NL58, is identified as a copper-copper pair in a negatively charged state. The second spectrum,labeled Si-NL59, is attributed to a complex containing one copper atom.