SELF-ORGANIZATION IN POROUS SILICON FORMATION

We investigate the diffusion-induced nucleation model for the formatio n of porous silicon. We show that simulations based on this model can explain experimental features such as (i) a constant porosity profile, (ii) a planar film front, and (iii) the effect of the surface roughne ss on the porosity profile. We show that for a critical roughness the surface nanoporous layer disappears. Further, these simulations highli ght aspects of self-organization in the pore formation process.