We have developed microprobe reflection high energy electron diffracti
on combined with scanning tunneling microscope and molecular beam epit
axy equipment. This combination makes it possible to study and control
surface processes in the magnification range from several hundred mic
rometers to the atomic scale. An electron biprism is also attached to
the incident electron beam path, which produces a new kind of scanning
electron microscopy called scanning interference electron microscopy.
The two coherently divided electron beams created by the biprism prod
uce electron interference fringes. The electron interference fringes a
re used to form ultrafine periodic structures by electron-stimulated s
urface reaction and to characterize electromagnetic properties of the
surfaces. The formation of periodic carbon grid lines produced by the
interference fringes on a GaAs surface and the study of Ge thin film g
rowth on a partially Ga adsorbed Si(111) surface are described for app
lication examples of the microscopy.