STUDY OF GSMBE GROWTH AND CHARACTERISTICS OF HIGH-QUALITY STRAINED IN0.63GA0.37AS INP QUANTUM-WELLS/

High-quality compressively strained In0.63Ga0.37As/InP quantum wells w ith different well widths (1-11 nm) have been grown coherently on InP substrates using a home-made gas source molecular beam epitaxy (GSMBE) system. The indium composition in the wells of the sample was determi ned by means of high-resolution X-ray diffraction and its computer sim ulation. it is found that the exciton transition energies determined b y photoluminescence (PL) at 10 K are in good agreement with those calc ulated using a deformation potential model. Sharp and intense peaks fo r each well can be well resolved in the 10 K PL spectra. For wells nar rower than 4 nm, the line width of the PL peaks are smaller than the t heoretical values of the line-width broadening due to 1 hit interface fluctuation, showing that the interface fluctuation of our sample is w ithin 1 ML. For wells of 7 and 9 nm, the PL peak widths are as low as 4.5 meV.