ANALYSIS OF TRAPPING AND DETRAPPING IN SEMIINSULATING GAAS DETECTORS

Authors
ROGALLA M EICH T EVANS N GEPPERT R GOPPERT R IRSIGLER R LUDWIG J RUNGE K SCHMID T MARDER DG
Citation
M. Rogalla et al., ANALYSIS OF TRAPPING AND DETRAPPING IN SEMIINSULATING GAAS DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 395(1), 1997, pp. 49-53
Citations number
15
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
395
Issue
1
Year of publication
1997
Pages
49 - 53
Database
ISI
SICI code
0168-9002(1997)395:1<49:AOTADI>2.0.ZU;2-9
Abstract
To investigate the trapping and detrapping in SI-GaAs particle detecto rs we analyzed the charge signals caused by 5.48 MeV alpha particles, using a charge sensitive preamplifier. From the bias and temperature d ependence of these signals we determine the activation energies of two electron traps. Additional simulation and measurements of the charge carrier lifetime as a function of resistivity have shown that the EL2( +) trap is the dominant electron trap in semi-insulating GaAs.