GAAS STRUCTURES WITH DEEP CENTERS FOR IONIZING-RADIATION DETECTION

GaAs structures with deep centres have been proposed for the manufactu re of microstrip detectors (MSD). It has been shown that the processes of collection of non-equilibrium charge carriers can be described by applying the drift model in which the dependence of the amplitude of t he registered charge on the electric field, E, is approximately Q simi lar to E-1/3. The main region responsible for charge collection is the space charge region of the pi-nu junction and the high resistivity pi region within the n(+)-pi-nu-n structures fabricated by in-diffusion of Cr and Fe deep dopants into substrate GaAs wafers.