Ss. Khludkov et al., GAAS STRUCTURES WITH DEEP CENTERS FOR IONIZING-RADIATION DETECTION, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 395(1), 1997, pp. 132-133
GaAs structures with deep centres have been proposed for the manufactu
re of microstrip detectors (MSD). It has been shown that the processes
of collection of non-equilibrium charge carriers can be described by
applying the drift model in which the dependence of the amplitude of t
he registered charge on the electric field, E, is approximately Q simi
lar to E-1/3. The main region responsible for charge collection is the
space charge region of the pi-nu junction and the high resistivity pi
region within the n(+)-pi-nu-n structures fabricated by in-diffusion
of Cr and Fe deep dopants into substrate GaAs wafers.