The fundamental mechanisms of diamond growth occur on the atomic scale
; however, the geometry of the deposition reactor and the other operat
ing parameters directly affect the chemical composition of the gas and
the temperature at the growth surface. The properties are, in turn, c
ontrolled by both atomic- and microstructural-scale features. By devel
oping diamond-growth models at each length scale and coupling the outp
ut of one model into the next, a comprehensive simulation scheme for d
iamond deposition is realized. This approach provides the missing link
between chemical vapor deposition reactor design/operating conditions
and the material structure/properties.