FORMATION OF ALPHA-MOLYBDENUM TRIOXIDE THIN-FILMS TO CONFIGURE LOW-DIMENSIONAL CONDUCTOR

Authors
FUKUSHIMA C NAGANO M SUMITA T KUBOTA H NAGATA M HONDA Y OKU T IMAHORI J
Citation
C. Fukushima et al., FORMATION OF ALPHA-MOLYBDENUM TRIOXIDE THIN-FILMS TO CONFIGURE LOW-DIMENSIONAL CONDUCTOR, Physica. B, Condensed matter, 239(1-2), 1997, pp. 56-58
Citations number
2
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
239
Issue
1-2
Year of publication
1997
Pages
56 - 58
Database
ISI
SICI code
0921-4526(1997)239:1-2<56:FOATTT>2.0.ZU;2-L
Abstract
Procedures of formation of alpha-molybdenum trioxide (alpha-MoO3) crys tal films are introduced. The films show the (0 k 0) peaks of alpha-Mo O3 in XRD results. Injection of hydrogen ion (30% of Mo atomic%) into alpha-MoO3 gives drastic change in the temperature dependence of elect rical resistance and its activation energy.