RAMAN-SCATTERING SPECTRA AND ELECTRICAL-CONDUCTIVITY OF THIN SILICON FILMS WITH A MIXED AMORPHOUS-NANOCRYSTALLINE PHASE-COMPOSITION - DETERMINATION OF THE NANOCRYSTALLINE VOLUME FRACTION

Authors
GOLUBEV VG DAVYDOV VY MEDVEDEV AV PEVTSOV AB FEOKTISTOV NA
Citation
Vg. Golubev et al., RAMAN-SCATTERING SPECTRA AND ELECTRICAL-CONDUCTIVITY OF THIN SILICON FILMS WITH A MIXED AMORPHOUS-NANOCRYSTALLINE PHASE-COMPOSITION - DETERMINATION OF THE NANOCRYSTALLINE VOLUME FRACTION, Physics of the solid state, 39(8), 1997, pp. 1197-1201
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physics of the solid state → ACNP
ISSN journal
10637834
Volume
39
Issue
8
Year of publication
1997
Pages
1197 - 1201
Database
ISI
SICI code
1063-7834(1997)39:8<1197:RSAEOT>2.0.ZU;2-P
Abstract
Raman spectra and electrical conductivity of thin films of hydrogenate d silicon with mixed amorphous-nanocrystalline phase composition have been studied. It is shown that interpretation of experimental data in terms of percolation theory permits one to determine the integrated Ra man-scattering cross-section ratio of the nanocrystalline to amorphous phase and to obtain a quantitative estimate of the volume fraction of each phase. (C) 1997 American Institute of Physics.