THEORETICAL-ANALYSIS OF THE IMPURITY DISTRIBUTION IN SINGLE-CRYSTAL SILICON

Authors
PONOMAREV KV KORZHAVYI PA VELIKOV YK
Citation
Kv. Ponomarev et al., THEORETICAL-ANALYSIS OF THE IMPURITY DISTRIBUTION IN SINGLE-CRYSTAL SILICON, Physics of the solid state, 39(8), 1997, pp. 1228-1229
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physics of the solid state → ACNP
ISSN journal
10637834
Volume
39
Issue
8
Year of publication
1997
Pages
1228 - 1229
Database
ISI
SICI code
1063-7834(1997)39:8<1228:TOTIDI>2.0.ZU;2-U
Abstract
Results are presented for the total energies calculated for oxygen and carbon impurities in silicon at T=0 K. The equilibrium positions of t hese point defects are determined at low (10(-3)-10(-2) at. %) concent rations. (C) 1997 American Institute of Physics.