ITO SURFACE BALL FORMATION INDUCED BY ATOMIC-HYDROGEN IN PECVD AND HW-CVD TOOLS

Authors
Citation
Jh. Lan et J. Kanicki, ITO SURFACE BALL FORMATION INDUCED BY ATOMIC-HYDROGEN IN PECVD AND HW-CVD TOOLS, Thin solid films, 304(1-2), 1997, pp. 123-129
Citations number
8
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
304
Issue
1-2
Year of publication
1997
Pages
123 - 129
Database
ISI
SICI code
0040-6090(1997)304:1-2<123:ISBFIB>2.0.ZU;2-R
Abstract
The formation of granule-like balls on the surface of indium-tin oxide (ITO) films induced by atomic hydrogen (H-) treatment in plasma-enhan ced chemical vapor deposition (PECVD) and hot-wire chemical vapor depo sition (HW-CVD) tools is reported in this paper. The ball formation on the film surface is responsible for the reduction in optical transmit tance and electrical conductivity of ITO films. The X-ray diffraction patterns have revealed that the H-treated ITO surfaces are composed of complicated compounds, including metallic indium, indium tin oxides, and indium hydroxides. Anger electron spectroscopy has shown that the balls are rich in indium atoms and areas outside the balls are rich in oxygen atoms. Finally, we have shown that by capping the ITO surface with a PECVD silicon oxide thin film, the degradation of ITO films can be completely prevented. (C) 1997 Elsevier Science S.A.