X-RAY PHOTON AND THERMAL EFFECTS ON TRIMETHYLSILANE COVERED SI(100) SURFACES

A trimethylsilane (TMSiH)-covered Si(100) surface at temperature -120 degrees C was chosen to investigate the X-ray photon and thermal effec ts on it. The AI-E: cr X-ray at the energy of 1.486 keV was used, not only for the radiation source, but also for the characterization tool of X-ray Photoelectron Spectroscopy (XPS). The core level Si 2p and C Is photoelectrons were monitored after each X-ray bombardment when sam ple temperature was held at -120 degrees C. Those photoelectrons were collected again on a newly prepared sample at each different sample te mperature in order to study the thermal effect on the TMSiH-covered Si surface. X-ray photons cause the initial increase of bath Si-C and C- SI bonds at the beginning of the first 35 min exposure and decrease la ter, However, both Si-C and C-SI bonds were gradually removed from the system by heating and finally disappeared at temperature below -40 de grees C. Unlike the 1,3 keV electron beam effect on the same system, b oth results indicate that the X-ray photons and thermal energy cannot continuously form the Si-C or C-Si bonds. X-ray photon induced seconda ry electrons were invoked in discussing the X-ray radiation results, ( C) 1997 Elsevier Science S.A.