EFFECTS OF WAVELENGTH, DEPOSITION RATE AND THICKNESS ON LASER-ABLATION DEPOSITED YSZ FILMS ON SI(100)

Laser wavelength has important effects on the crystalline properties o f yttria stabilized zirconia (YSZ) films deposited on Si(100) by KrF a nd ArF excimer laser ablation. While KrF-deposited films have been fou nd to be epitaxial on Si(100), only textured films can be obtained wit h ArF over wide pressure and temperature ranges. Studies on YSZ ablati on showed that the deposition rate could be the main difference betwee n the depositions with these wavelengths under the same conditions. Th e KrF deposition rate was reduced to the same level as ArF by changing the laser fluence and spot size, but the change had no effects on the films. Crystal quality decreases with film thickness, but the film te xture and in-plane orientation ([100](YSZ)parallel to[100](Si)) do not depend on this parameter. Laser repetition rate was found to affect f ilm properties. Best results are obtained at high repetition rates (ov er 10 Hz), while polycrystalline samples grow at 1 Hz. This behaviour is most probably related to YSZ degradation by exposure to high temper ature. (C) 1997 Elsevier Science S.A.