DEFECT ANALYSIS IN HIGH-TEMPERATURE DEFORMED AL SINGLE-CRYSTALS

Isochronal annealing studies of residual electrical resistivity were c arried out on Al (111) single crystals which had been deformed in tens ion at T-d = 0.5 T-m and T-d = 0.7 T-m (T-m refers to the melting temp erature in K). For all different plastic strains applied, two characte ristic annealing stages in the resistivity isochrones were observed. W hile one annealing stage occurs at T-d or above and corresponds to the annihilation of deformation induced dislocations, the other is situat ed at temperatures lower than T-d. From comparative quenching experime nts, the annealing of thermal defects can be ruled out. It is suggeste d that a second species of deformation-induced dislocations anneals he re which gets mobile during the unloading of crystals subsequent to th eir deformation. (C) 1997 Elsevier Science S.A.