DISLOCATION AND KINK MOTION STUDY IN THE BULK SIGE ALLOY SINGLE-CRYSTALS

The individual dislocation mobility in bulk single SiGe crystals has b een studied both with conventional and intermittent loading (IL) techn iques. A model is used connecting the experimental data on dislocation paths with values of kink displacements under IL. The experimental da ta are compared with two models describing the interaction of a disloc ation with point defects. It is shown that with small Ge concentration Cottrell atmosphere determines the dynamical drag of the dislocation giving rise to threshold immobilisation. With higher Ge content the sp ecific mode of kink drift along the dislocation line (the motion in th e field of random forces) takes place. (C) 1997 Elsevier Science S.A.