GAAS ALGAAS RIDGE LASERS WITH ETCHED MIRRORS FORMED BY AN INDUCTIVELY-COUPLED PLASMA REACTOR/

Etched mirrors for semiconductor lasers are necessary for optoelectron ic integrated circuit applications. This letter reports on the use of an inductively coupled plasma (ICP) reactor to create etched mirrors o n GaAs/AlGaAs ridge lasers. Etch chemistries consisting of boron trich loride and chlorine were used to achieve both smooth and vertical mirr or surfaces. Optical measurements indicate that devices fabricated wit h ICP etched mirrors an comparable to devices formed by cleaved mirror s. (C) 1997 American Institute of Physics.