Reconfigurable optical properties were studied in InGaN/GaN multiple q
uantum well (MQW) structures. It was observed that a short time exposu
re to a high intensity ultraviolet light results in long term, but rev
ersible changes of the optical properties of InGaN/GaN MQW samples. Th
e photoinduced changes can be observed using an optical microscope und
er low intensity ultraviolet light and are visible as a high contrast
pattern. The retention time at room temperature for 12 and 20 MQW samp
les was longer than five days and four weeks, respectively. The effect
was studied at room and cryogenic temperatures. (C) 1997 American Ins
titute of Physics.