CHARACTERIZATION OF WAFER BONDED PHOTODETECTORS FABRICATED USING VARIOUS ANNEALING TEMPERATURES AND AMBIENTS

Authors
LEVINE BF HAWKINS AR HIU S TSENG BJ REILLEY JP KING CA GRUEZKE LA JOHNSON RW ZOLNOWSKI DR BOWERS JE
Citation
Bf. Levine et al., CHARACTERIZATION OF WAFER BONDED PHOTODETECTORS FABRICATED USING VARIOUS ANNEALING TEMPERATURES AND AMBIENTS, Applied physics letters, 71(11), 1997, pp. 1507-1509
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
11
Year of publication
1997
Pages
1507 - 1509
Database
ISI
SICI code
0003-6951(1997)71:11<1507:COWBPF>2.0.ZU;2-Q
Abstract
A detailed study of the important role of temperature and gas ambient on the bonding between Si and InGaAs wafers was performed. The heteroi nterface was characterized by fabricating p-i-n photodetectors and mea suring the forward and reverse currents, the capacitance, the absolute quantum efficiency, and the response bandwidth. Clear evidence for a thin tunneling barrier is found for nonoptimum fusing conditions. (C) 1997 American Institute of Physics.