MECHANICAL RELAXATION OF STRAINED SEMICONDUCTING STRIPES - INFLUENCE ON OPTOELECTRONIC PROPERTIES

The mechanical relaxation of strained semiconducting stripes is studie d. The deformation tensor is calculated using a classical approach of elasticity problem with predeformations; the electronic band structure is then simulated using an 8 band kp model including strain. To confi rm the models developed, compressively and tensely strained stripes we re fabricated and characterized by photoluminescence measurements. The oretical and experimental results are in very good agreement and show the importance of mechanical anisotropic relaxation phenomena in optoe lectronic devices like waveguide structures, modulators, or lasers. (C ) 1997 American Institute of Physics.