CHARGED-PARTICLE ACTIVATION-ANALYSIS OF BORON AND CARBON ON THE SURFACE OF SILICON-WAFER

Authors
KATAOKA S TARUMI Y YAGI H TOMIYOSHI S NOZAKI T
Citation
S. Kataoka et al., CHARGED-PARTICLE ACTIVATION-ANALYSIS OF BORON AND CARBON ON THE SURFACE OF SILICON-WAFER, Journal of radioanalytical and nuclear chemistry, 216(2), 1997, pp. 217-219
Citations number
7
Categorie Soggetti
Chemistry Inorganic & Nuclear","Chemistry Analytical","Nuclear Sciences & Tecnology
Journal title
Journal of radioanalytical and nuclear chemistry → ACNP
ISSN journal
02365731
Volume
216
Issue
2
Year of publication
1997
Pages
217 - 219
Database
ISI
SICI code
0236-5731(1997)216:2<217:CAOBAC>2.0.ZU;2-O
Abstract
Boron and carbon on the surface of silicon wafers in ordinary atmosphe res were measured by activation with the B-10(d,n)C-11 and Cd-12(d,n)N -13 reaction, respectively. Two sample plates in intimate contact were bombarded by deuterons, and the C-11 or N-13 formed at the inside sur faces were measured after chemical separation. From 1.2 . 10(13) to 8. 4 . 10(13) atoms/cm(2) of boron and from 2.4 . 10(14) to 6.1 . 10(15) atom/cm(2) of carbon were found, and the sensitivity was extended down to 5 . 10(12) and 3 . 10(12) atoms/cm(2) for boron and carbon, respec tively.