S. Kataoka et al., CHARGED-PARTICLE ACTIVATION-ANALYSIS OF BORON AND CARBON ON THE SURFACE OF SILICON-WAFER, Journal of radioanalytical and nuclear chemistry, 216(2), 1997, pp. 217-219
Boron and carbon on the surface of silicon wafers in ordinary atmosphe
res were measured by activation with the B-10(d,n)C-11 and Cd-12(d,n)N
-13 reaction, respectively. Two sample plates in intimate contact were
bombarded by deuterons, and the C-11 or N-13 formed at the inside sur
faces were measured after chemical separation. From 1.2 . 10(13) to 8.
4 . 10(13) atoms/cm(2) of boron and from 2.4 . 10(14) to 6.1 . 10(15)
atom/cm(2) of carbon were found, and the sensitivity was extended down
to 5 . 10(12) and 3 . 10(12) atoms/cm(2) for boron and carbon, respec
tively.